Toshiba FeRAM —Ferroelectric Random Access Memory

Toshiba Corporation today announced the prototype of a new FeRAM —Ferroelectric Random Access Memory—that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and read and write speeds of 1.6-gigabytes a second, the most advanced combination of performance and density yet achieved. Full details of the new FeRAM will be presented this week at the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, USA.

FeRAM has a new circuit that allows it to interface with DDR2 as well. More details at Techpowerup here.