|18-08-2010, 12:50 PM||#1|
Join Date: May 19 2008
[Techpowerup.com] (PR) Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25 nm Process
Intel Corporation and Micron Technology Inc. today announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device. The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.
The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.
|3bitpercell, flash, intel, memory, micron, nand, process, sample, techpowerupcom|
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