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Silicon giant Samsung is making PRAM a reality next month, after its announcement back in 2006. PRAM, or phase-change random-access memory, uses a technique of phase-transition of chalcogenide glass to store data. The active component can quickly change its form from crystalline, to micro-crystalline (amorphous), when subjected to charge. The cycle takes place so quickly, that it can be used to store and deliver data at speeds up to 30 times higher that NAND or NOR flash memory, and support write-cycles at least 10-times higher than the two.

The best of both NOR and NAND are on offer: the random-access speeds of NOR, and the permanent-storage of NAND. The first line of PRAM chips from Samsung are set for mass-production in June. It will arrive in capacities of 512 MB. On its application front, so far no other companies have announced products that can utilize the new technology, nor has such an announcement come from Samsung, but the company will definitely need a few "launch-vehicles" for PRAM in the very near future.



Source: Electronista

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