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Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that it is ramping up 40-nm class production of high-density DDR3 memory chips to accommodate increased demand in server applications. The recent launch of Intel Corporation's Intel Xeon processor 5600 Series, as well as the introduction of Xeon 7500 processors support the growing industry demand for enhanced performance and low power platform solutions, especially when paired with DDR3 memory.

Samsung's DDR3 - the industry best-selling DDR3 - enables OEMs to use up to 192 gigabytes (GBs) on a Xeon 5500 platform (16GBx12) with at least a 73 percent improvement in power consumption at 1.35 volts, when accompanied by the Xeon 5600 processor. DDR3 has double the memory bandwidth of DDR2, with speeds up to 1333 Megabits per second (Mbps). With the new Xeon 7500 platform, OEMs can use up to 1 terabyte per 4-socket system and with more sockets, can easily scale to memory densities 2 TBs and higher. Later this year, Samsung's 4 Gigabit (Gb) DDR3 chips and modules also will be available for use with the latest Xeon platforms and processors.

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