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6/4 Beta Bios - Memory testing - DFI LP UT X48-T3RS
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07-06-2008, 08:03 AM
#5 (permalink)
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6/4 Beta Bios - Memory testing continued
I've flashed to
6/4 beta bios and it has opened up memory clocking quite a bit with the help of
DRAM Default Skew model options. Before with 5/21 official bios, this 2x1GB OCZ PC3-14400 Platinum was struggling to pass 970Mhz 8-8-8-24 at 2.15-2.22v and no way it would boot into windows >970Mhz. Now with 6/4 beta bios and
DRAM Default Skew set to Model 3 (tuned for Micron D9 ICs), I managed to pull off 1M @1010Mhz 8-7-6-24 at 2.15v and max cpuz validation @1040Mhz 8-7-6-24 at 2.15v !

It seems that
DRAM Default Skew model options have really opened up a world of possibilities regarding memory overclocking tailored to different IC types
DFI LP UT X48-T3RS 6/4 Beta Bios Settings
Code:
PC Health Status
Adjust CPU Temp: Auto
CPU Feature
- Thermal Management Control: Disabled
- PPM(EIST) Mode: Disabled
- Limit CPUID MaxVal: Disabled
- CIE Function: Disabled
- Virtualization Technology: Disabled
- Core Multi-Processing: Enabled
Exist Setup Shutdown: Mode 2
Shutdown after AC Loss: Disabled
O.C. Fail retry Counter 0
CPU Clock Ratio: 8x
CPU N/2 Ratio: Disabled
Target CPU Clock:
CPU Clock: 505
Boot Up Clock: AUTO
CPU Clock Amplitude: 900mv
CPU Clock0 Skew: 900ps
CPU Clock1 Skew: 900ps
DRAM Speed: 333/1333
- Target DRAM Speed: DDR3-1333
PCIE Clock: 100mhz
PCIE Slot Config: 1X 1X
CPU Spread Spectrum: Disabled
PCIE Spread Spectrum: Disabled
SATA Spread Spectrum: Disabled
Voltage Settings
CPU VID Control: 1.38750v
COY VID Special Add Limit: Enabled
CPU VID Special Add: AUT0
DRAM Voltage Control: 2.15v
SB Core/CPU PLL Voltage: 1.51
NB Core Voltage: 1.655
CPU VTT Voltage: 1.300
Vcore Droop Control: Enabled
Clockgen Voltage Control: 3.45v
GTL+ Buffers Strength: Strong
Host Slew Rate: Weak
x MCH RON Offset Value:
x MCH RTT Offset Value:
x MCH Slew Rate Offset Value:
x MCH VREF 1 Value:
x MCH VREF 2 Value:
x MCH VREF 3 Value:
GTL REF Voltage Control: Disable
x CPU GTL 1/2 REF Volt: 113
x CPU GTL 0/3 REF Volt: 100
x North Bridge GTL REF Volt: 100
DRAM Timing
- Enhance Data transmitting: Auto
- Enhance Addressing: Auto
- T2 Dispatch: Auto
DRAM Default Skew Model: Model 3
Fine Delay Step Degree: 5ps to 80ps
Clock Setting Fine Delay
Ch1 Clock Crossing Setting: AUTO
- DIMM 1 Clock fine delay: Current 294ps
- DIMM 2 Clock fine delay: Curren 294ps
- DIMM 2 Control fine delay: Current 420ps
- DIMM 1 Control fine delay: Current 532ps
- Ch 1 Command fine delay: Current 623ps
Ch2 Clock Crossing Setting: AUTO
- DIMM 3 Clock fine delay: Current 511ps
- DIMM 4 Clock fine delay: Current 511ps
- DIMM 4 Control fine delay: Current 77ps
- DIMM 3 Control fine delay: Current 189ps
- Ch 2 Command fine delay: Current 280ps
Ch1Ch2 CommonClock Setting: AUTO
Ch1 RDCAS GNT-Chip Delay: Auto
Ch1 WRCAS GNT-Chip Delay: Auto
Ch1 Command to CS Delay: Auto
Ch2 RDCAS GNT-Chip Delay: Auto
Ch2 WRCAS GNT-Chip Delay: Auto
Ch2 Command to CS Delay: Auto
Common CMD to CS Timing: /2N (command rate)
CAS Latency Time (tCL): 8
RAS# to CAS# Delay (tRCD): 7
RAS# Precharge (tRP): 6
Precharge Delay (tRAS): 24
All Precharge to Act: AUTO
REF to ACT Delay (tRFC): 60
Performance LVL (Read Delay) (tRD): AUTO
Read delay phase adjust: Enter
Ch1 Read delay phase (4~0)
- Channel 1 Phase 0 Pull-In: AUTO
- Channel 1 Phase 1 Pull-In: AUTO
- Channel 1 Phase 2 Pull-In: AUTO
- Channel 1 Phase 3 Pull-In: AUTO
- Channel 1 Phase 4 Pull-In: AUTO
Ch2 Read delay phase (4~0)
- Channel 2 Phase 0 Pull-In: Auto
- Channel 2 Phase 1 Pull-In: Auto
- Channel 2 Phase 2 Pull-In: Auto
- Channel 2 Phase 3 Pull-In: Auto
- Channel 2 Phase 4 Pull-In: Auto
MCH ODT Latency: AUTO
Write to PRE Delay (tWR): AUTO
Rank Write to Read (tWTR): AUTO
ACT to ACT Delay (tRRD): AUTO
Read to Write Delay (tRDWR): AUTO
Ranks Write to Write (tWRWR): AUTO
Ranks Read to Read (tRDRD): AUTO
Ranks Write to Read (tWRRD): AUTO
Read CAS# Precharge (tRTP): AUTO
ALL PRE to Refresh: AUTO
More tests to come...